ISAHAYA ELECTRONICS CORPORATION – ACTIVE COMPONENTS
With the constant advances in the quality, reliability and size reduction of electronic equipment in today’s society, great expectations are placed on technological developments and their application. At Isahaya Electronics Corporation, with their semiconductor design technology, from design of small signal transistors to design of high quality multi-function transistors, and our application circuit technology that uses these semiconductors as key components, they are able to meet all kinds of size reduction and high level quality requirements.
Products
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IGBT gate driver for high power VLA539
Built-in the isolated DC-DC converter for gate drive.
Main Application
VCES=1700V,IC=3600A class IGBT module
Characteristics
• Supply voltage: DC15V
• Output current : +/-24A
• Size[HxLxW] : 42 x 88 x 17 mm
• Electrical isolation voltage is 2500Vrms (for 1 minute)
• Isolated DC-DC converter module had 4 outputs
VLA107
Four outputs which had isolated independently,
Thin profile by Single In Line structure.
Main Application
Power supply for electrical devices
Characteristics
• Supply voltage : DC15V
• Output current : +/- 24A
• Low noise
• No use optical coupler,high reliability
• Electrical isolation voltage is 2500Vrms (for 1 minute)
• IGBT gate drive unit
VLA536
Built-in the isolated DC-DC converter for gate drive.
Main Application
MITSUBISHI NX series IGBT module gate drive
FUJI U series IGBT module gate drive
VCES=600V series ~400A class
VCES=1200V series ~450A class
Characteristics
• Two way power supply system for drivers and input signal
VD=15V,VIN=5V
• Built-in short circuit protection
• Electrical isolation voltage is 2500Vrms (for 1 minute)
• CMOS compatible input interface
• Isolated DC-DC converter
VLA106 series
2500Vrms isolation voltage for inverter peripheral
Main Application
Drive power supply for IPM and IGBT
Characteristics
• Input voltage:
VLA106-24151, -24154,-24242���DC21.6V~26.4V
VLA106-15242����������DC12V~18V
• Output voltage:
VLA106-24151 +15V,100mA
VLA106-24154 +15V,300mA
VLA106-24242 +24V,100mA(separatable to +16V,-8V)
VLA106-15242 +24V,100mA(separatable to +16V,-8V)
• Output over current protection
• Electrical isolation between input and output���2500Vrms
• Small footprint(SIP design)
Category Product lists
DC-DC converters
DC-DC converter series
Isolated DC-DC converter series
IGBT drivers
IGBT driver series
IPM interface module
Low voltage drive MOSFET
Nch INK0103AC1 INK0103AM1 INK0103AU1 RT3KGGM
Pch INJ0103AC1 INJ0103AM1 INJ0103AU1 RT3JGGM
In the case of VGS=1.8V, ID=0.7A(Nch)/0.4A(Pch) is possible.
Four kinds of packages are prepared depending on a use.
Switching use of the portable equipment
• Drive voltage 1.8V.
• High drain current. Nch:0.7A Pch:0.4A
• Low on resistance. Nch:0.33Ω(Typ) Pch:0.7Ω(Typ)
• INK0103A* Details is here
• INJ0103A* Details is here
• RT3KGGM RT3JGGM Details is here
Ze diode built-in MOSFET
INKE111AC1
Zener diode between Drain and Source can protect transistor from
back electromotive force when driving motor or solenoid.
In a drive circuit of the inductance load, reduction of the number of
the parts and the reduction of the mounting area are possible.
Motor drive solenoid drive circuit
• Built-in zener diode between drain and sourse
• Avalanche current IAV=1.0A
• Small package for easy mounting
• Details is here
Bipolar power transistor(TO-252 TO-220FP)
Deployment of TO-252 and TO-220 package with more demand
than a visitor planned.
Low frequency amply
Motor drive IGBT driver etc
• TO252(NPN) Development schedule model is here
• TO252(PNP) Development schedule model is here
• TO220FP(NPN) Development schedule model is here
• TO220FP(PNP) Development schedule model is here
Differential amplifier Transistor
RT3A66M RT3C66M
Equal INA6006AC1 and INC6006AC1 of the characteristic are carried in
SC-88 PKG, respectively.
The differential amplifier circuit of an audio instrument can consist of
this element.
Differential amplifier circuit of audio instrument
• High voltage. VCEO=150V(RT3A660M) 160V(RT3C66M)
• Good pear characteristic. hFE1/hFE2=1.0(Type) |VBE1-VBE2|=2mV(Type)
• High hFE. Details is here
Multi-Function Transistor
RT8HXXXC RT8HXXXE
Small-scale IC can be developed in short period
by recombining wire between the transistor or resistor etc beforehand
arranged on the chip.
Integrating a customer specific circuit of discrete parts
Utility for sudden change of specification or the measure against a bug
• Low developing cost
• Short developing period (About one month)
• Easily changing specification
• General-purpose product is also prepared.
• Custom specifications
Simulation Data
2SA2166 ISA2166AM1 ISA2166AU1
INA6006AC1 INA6006AP1
2SC5482 2SC3444 2SC5619 SC5620 2SC5621 2SC6046 2SC6120 ISC6046AU1
INC5001AC1 INC5001AP1 INC6006AC1 INC6006AP1 MC9XX MC2XXX
Publishing spice parameter for simulations by homepage is started.
Although available model is only a part now , expansion to other model
is advanced.
• 2SA2166,ISA2166AM1,ISA2166AU1,
INA6006AC1,INA6006AP1
• 2SC5482
• 2SC3444,2SC5619,2SC5620,2SC5621,2SC6046,2SC6120,ISC6046AU1,
INC5001AC1,INC5001AP1,INC6006AC1,INC6006AP1
• MC9XX
• MC2XXX