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Diotec Semiconductor Silicon Carbide (SiC) MOSFETs

Diotec Semiconductor Silicon Carbide (SiC) MOSFETs are ideally suited for high voltage and high frequency switching used in charging systems for electric vehicles (EV), solar inverters, or telecom power supplies. These MOSFETs feature a high 1200V reverse voltage, extremely low on-resistance, total Gate charge, low switching time, and low total switching energy. Advanced planar technology and the Silicon Carbide wafer material enable higher on-resistances at higher switching frequencies.

MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. Silicon carbide (SiC) MOSFETs, while having similar design elements to silicon MOSFETs, offer higher blocking voltage and greater thermal conductivity. SiC power devices also feature lower on-state resistance and have ten times the breakdown strength of regular silicon. Systems incorporating SiC MOSFETs generally exhibit better performance and increased efficiency compared to those using silicon MOSFETs.

Diotec Silicon Carbide (SiC) MOSFETs facilitate higher switching frequencies and reduce the size of components such as inductors, capacitors, filters, and transformers. By replacing silicon devices, Diotec SiC MOSFETs lower switching and conduction losses while providing higher blocking voltages and avalanche capability. SiC MOSFETs are advantageous due to their ability to operate efficiently in high-temperature environments and support higher switching frequencies, resulting in more compact product sizes.

Utilizing SiC devices over traditional silicon devices offers multiple benefits, including enhanced voltage and current capabilities and improved efficiency. This leads to smaller systems with higher power density. SiC MOSFETs also feature unparalleled Unclamped Inductive Switching (UIS) avalanche ratings and gate oxide stability, making them a reliable and rugged solution.

Diotec Semiconductor's SiC MOSFET family is highly suitable for EV charging systems, solar inverters, and other power supply applications in the automotive, industrial, and commercial sectors.

These silicon carbide MOSFETs feature low switching losses, high voltage levels (1200 V), on-state resistance (RDSon) ranging from 53 mΩ to 23 mΩ, and low gate charge, with a continuous gate-source voltage (VGSS) from -8 V to 22 V.
Diotec SiC MOSFETs offer exceptional flexibility and performance, delivering increased efficiency and reliability in high-voltage applications. Representing a significant advancement in power electronics, Diotec SiC MOSFET technology enables the design of more efficient, compact, and reliable systems.
Diotec SiC MOSFETs

Features

  • High reverse voltage
  • Advanced planar technology
  • Low on-state resistance
  • Fast switching time
  • Low gate charge
  • Low total switching energy
  • Engineering samples available
  • UL 94V-0 rated case material
  • Halogen-free, lead-free, and RoHS compliant

Applications

  • Charging systems for electric vehicles (EV)
  • Solar inverters
  • Telecom power supplies
  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC)

Specifications

  • 1200V drain-source voltage
  • Maximum 53mΩ to 23mΩ on-state resistance
  • 100µA drain-source leakage current
  • From to -8V to 22V continuous gate-source-voltage range
  • 15V to 18V recommended turn-on gate voltage range
  • 0V recommended turn-off gate voltage
  • 278W power dissipation
  • 100A peak drain current
  • 0.54K/W maximum thermal resistance
  • -55°C to +175°C operating junction temperature range
  • Industrial TO-247 package with 3x and 4x leads