GeneSiC Semiconductor
GeneSiC Semiconductor Inc. manufactures and markets silicon carbide (SiC) based power semiconductors and devices. The company offers SiC-based rectifier, transistor, and thyristor products. GeneSiC Semiconductor is a pioneer and world leader in Silicon Carbide technology and also develops high power Silicon technologies. GeneSiC Semiconductor plays a key enabling role in conserving energy in a wide array of high power systems. GeneSiC’s technology enables efficient harvesting of renewable energy sources. GeneSiC electronic components run cooler, faster, and more economically.
GeneSiC holds leading patents on wide bandgap power device technologies. GeneSiC capitalizes on its expertise in device design, fabrication and testing to develop the best possible SiC devices for its customers. GeneSiC’s highly innovative and experienced engineers enable us to exceed the performance and price point of our competition. GeneSiC continually strives to promote their competitive Silicon products while developing new Silicon Carbide products. Specific applications for our products include: Protection, Input, Control Switching, and Output stages. It is GeneSiC’s goal to break down road blocks faced by their customers by offering highly efficient and ground breaking solutions that deliver superior thermal performance, minimal losses and compact performance.
GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors has a healthy offering of IGBTs in its pocket. The portfolio of GeneSiC Semiconductors includes variable offerings in the IGBT space. Lately, its extensive focus into SiC offerings has opened a new market opportunity for GeneSiC Semiconductors. One of the latest offerings include, SiC Schottky/Si IGBT mini-modules (Co-packs) by GeneSiC. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices.
Featured Products
GB01SLT Silicon Carbide Power Schottky Diodes
Offers low leakage/reverse recovery currents and low standby power/switching losses.
GB10MPS17 SiC Power Schottky Diode
A 1700V diode with low reverse current, low power/switching losses, and high avalanche capability.
GB02SLT12 Silicon Carbide Power Schottky Diodes
SiC diodes with low leakage current, low switching loss, and superior surge current capability.
Silicon Carbide Junction Transistors/Schottky Diode Co-Packs
Hybrid silicon IGBT combined with a SiC rectifier that offers revolutionary switching performance.
High-Temperature SiC Transistors and Rectifiers
Compact, high-temperature SiC Junction Transistors (SJTs) and rectifiers in a TO-46 package.
MBR20100 Silicon Power Schottky Diodes
High durability & high surge capability in half the size/weight of standard power schottky diodes.