HWF1688NC Details / Availability
HWF1688NC Summary: HWF1688NC from HexaWave is HWF1688NC Hexawave RF Power FET Transistor DIE-16
Details
Part Number: HWF1688NC
Description : HWF1688NC Hexawave RF Power FET Transistor DIE-16
Manufacturer: HexaWave
Category: Transistors
Quantity Avail: rfq
Price: Request for Quote
HexaWave
- Established in 1991, Hexawave specializes in delivering a comprehensive range of high-frequency and high-power RF ICs tailored for 5G New Radio Power Amplifier, Low Noise Amplifier, and RF Switch MMIC solutions. Our product lineup caters to diverse applications, spanning wireless connectivity, low earth orbit satellites, smart cities, and IoT devices.Continuing our commitment to innovation, Hexawave drives the advancement of wireless communication products, drawing upon extensive experience in the field. We lead the industry by strategically planning for emerging trends, technologies, and products. Our business operations are characterized by integrity and open-mindedness, fostering trust among clients and end-customers, thereby fostering enduring partnerships.
PRODUCTS
Power Amplifier: A cornerstone of communication systems, our HWA series high-efficiency power amplifier supports 3GPP and 5G NR FR1 bands n77 and n78. With exceptional power added efficiency (PAE), it not only conserves power but also effectively manages heat dissipation.
GaAs RF Switch: Our offerings include High-Frequency 8 GHz Switch, High Power Switch, General Power SPDT Switch (DC 6 GHz), and General Power SPDT Switch (DC3 GHz), among others.
GaN Power Device: Amidst the accelerated growth of 5G communications, electric vehicles, and carbon neutrality initiatives, gallium nitride (GaN) emerges as a key enabler, offering higher efficiency, energy savings, and enhanced power capabilities. Hexawave boasts a top-tier research and development team specializing in gallium arsenide high-frequency products, with investments focused on energy-saving components. Leveraging the exceptional performance of GaN materials, we have pioneered GaN power switching transistors with lower on-resistance than silicon and even surpassing mechanical relay contacts. Our HexaGaN line embodies ultra-high efficiency, compact size, and minimal thermal losses.
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